Record Details
Predicting Amorphous Metal Oxide Band Gaps: Rapid Band Gap Prediction of Amorphous Metal Oxides- 250 Stoichiometry Dataset
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Predicting Amorphous Metal Oxide Band Gaps: Rapid Band Gap Prediction of Amorphous Metal Oxides- 250 Stoichiometry Dataset |
| Names |
Mustard, Thomas J. L.
(creator) |
| Date Issued | 2015-05-29 (iso8601) |
| Note | Suggested citation: "Mustard, Thomas J. L. (2015): Predicting Amorphous Metal Oxide Band Gaps: Rapid Band Gap Prediction of Amorphous Metal Oxides- 250 Stoichiometry Dataset. Oregon State University Libraries. Dataset. http://dx.doi.org/10.7267/N9D798BG." |
| Abstract | We computed band gaps of amorphous oxides within the In-Ga-Zn triad. These included ZnO, Ga2O3, In2O3, Ga2ZnO4, Ga2Zn8O11, In2ZnO4, InGaZnO4, and InGaO3. Comparing the computed band gap to experimental measurements, the results were promising with a mean unsigned error of 0.28 eV and an unsigned standard deviation of 0.28 eV. With this method in hand we then created and predicted the band gap for 250 stoiciometries within the In-Ga-Zn-O traid. A trend can be seen from the data, In composition has the greatest effect on band gap, Ga a slight effect, and Zn has little to none. |
| Genre | Dataset |
| Access Condition | http://creativecommons.org/publicdomain/zero/1.0/ |
| Topic | InGaZnO4 |
| Identifier | http://hdl.handle.net/1957/55895 |
