Record Details
Comprehensive depletion-mode modeling of oxide thin-film transistors
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Comprehensive depletion-mode modeling of oxide thin-film transistors |
| Names |
Zhou, Fan
(creator) Wager, John (advisor) |
| Date Issued | 2014-11-21 (iso8601) |
| Note | Graduation date: 2015 |
| Abstract | The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can be used for carrier mobility extraction. In the modified comprehensive depletion-mode model, interface mobility (mu_interface ) and bulk mobility (mu_bulk ) are distinguished. Simulation results reveal that when square-law theory mobility extraction equations are used to assess depletion-mode TFTs, the estimated interface mobility is often overestimated. In addition, the carrier concentration of a thin channel layer can be estimated from an accurate fitting of measured depletion-mode TFT current-voltage characteristics curves using the comprehensive depletion-mode model. |
| Genre | Thesis/Dissertation |
| Topic | thin film transistors |
| Identifier | http://hdl.handle.net/1957/54315 |
