Record Details
Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling |
| Names |
Alimardani, Nasir
(creator) Conley, John F., Jr. (creator) |
| Date Issued | 2014-08-25 (iso8601) |
| Note | This is the publisher’s final pdf. The published article is copyrighted by the American Institute of Physics Publishing and can be found at: http://scitation.aip.org/content/aip/journal/apl. |
| Abstract | Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al₂O₃-Ta₂O₅ bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta₂O₅ via defect based conduction before tunneling directly through the Al₂O₃, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature. |
| Genre | Article |
| Identifier | Alimardani, N., & Conley Jr, J. F. (2014). Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling. Applied Physics Letters, 105(8), 082902. doi:10.1063/1.4893735 |
