Record Details
Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model |
| Names |
Zhou, Fan
(creator) Yeh, Bao-Sung (creator) Archila, Kevin A. (creator) Wager, John F. (creator) |
| Date Issued | 2014-07-17 (iso8601) |
| Note | This is the publisher’s final pdf. The published article is copyrighted by the author(s) and published by the Electrochemical Society. The published article can be found at: http://jss.ecsdl.org/. |
| Abstract | In an enhancement-mode, n-channel (p-channel) oxide thin-film transistor (TFT), current arises as a consequence of electron (hole) transport within a narrow accumulation layer. The square-law model accurately describes enhancement-mode TFT behavior and establishes the equations appropriate for carrier mobility extraction. In contrast, in a depletion-mode oxide TFT, carrier transport can occur within an accumulation layer and/or within the ‘bulk’ portion of the channel. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can be used for carrier mobility extraction. Simulation reveals that when square-law theory mobility extraction equations are used to assess depletion-mode TFTs, the estimated interface mobility is often overestimated. |
| Genre | Article |
| Access Condition | http://creativecommons.org/licenses/by/3.0/us/ |
| Identifier | Zhou, F., Yeh, B. S., Archila, K. A., & Wager, J. F. (2014). Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model. ECS Journal of Solid State Science and Technology, 3(9), Q3027-Q3031. doi:10.1149/2.004409jss |
