Record Details
Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors |
| Names |
Du, Xiaosong
(creator) Flynn, Brendan T. (creator) Motley, Joshua R. (creator) Stickle, William F. (creator) Bluhm, Hendrik (creator) Herman, Gregory S. (creator) |
| Date Issued | 2014-07-30 (iso8601) |
| Note | To the best of our knowledge, one or more authors of this paper were federal employees when contributing to this work. This is the publisher’s final pdf. The published article is copyrighted by the Electrochemical Society and can be found at: http://jss.ecsdl.org/. |
| Abstract | Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower bias-stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs can be primarily attributed to a reduction in molecular adsorption of contaminants on the IGZO back channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface. |
| Genre | Article |
| Topic | Layer deposition |
| Identifier | Du, X., Flynn, B. T., Motley, J. R., Stickle, W. F., Bluhm, H., & Herman, G. S. (2014). Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors. ECS Journal of Solid State Science and Technology, 3(9), Q3045-Q3049. doi:10.1149/2.010409jss |
