Record Details
Material development for thin-film transistors
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Material development for thin-film transistors |
| Names |
Archila, Kevin Alexander
(creator) Wager, John (advisor) |
| Date Issued | 2014-09-25 (iso8601) |
| Note | Graduation date: 2015 |
| Abstract | The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole carrier concentration of 10¹⁷ cm⁻³. Simulations employing the comprehensive depletion-mode model (CDMM) are used to extract TFT channel interface and bulk mobility, along with carrier concentration. The extracted values from CDMM simulations are in close agreement with Hall-effect measurements of carrier concentration and TFT incremental mobility. TFTs are fabricated employing solution-processed thin films spin-coated with electrochemically prepared solutions. Dual active-layer TFTs utilizing solution-processed IZTO-IGZO active layers demonstrated the highest average mobility, exceeding that of control sputtered IGZO TFTs. Sputtered IGZO TFTs are studied using solution-processed Al₂O₃ and LaAlO₃ gate insulator layers. The solution-processed Al₂O₃ gate exhibits high subthreshold swing compared to employing a thermally grown SiO₂ gate insulator layer. |
| Genre | Thesis/Dissertation |
| Topic | electrochemistry |
| Identifier | http://hdl.handle.net/1957/52477 |
