Record Details
Amorphous metal thin films as a platform for solution processing
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Amorphous metal thin films as a platform for solution processing |
| Names |
Landau, Nicholas P.
(creator) Wager, John F. (advisor) |
| Date Issued | 2014-08-21 (iso8601) |
| Note | Graduation date: 2015 |
| Abstract | The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C for PIC Al₂O₃ deposited onto TaWSi AMTFs are conducted under vacuum with forming gas in order to maintain PIC film structural integrity. Conduction through PIC Al₂O₃ in TaWSi-based MIM diodes is argued to be space-charge limited current (SCLC) with trapping and is facilitated by pinhole shunts. In contrast, PIC Al₂O₃ deposited onto highly-doped n-type silicon substrates, which are processed in parallel to the TaWSi diodes, exhibit Fowler-Nordheim tunneling. A 10 nm layer of ALD-deposited Al₂O₃ prior to PIC Al₂O₃ deposition is shown to reduce the high leakage previously seen in TaWSi-based diodes fabricated without an ALD layer from 2.2 × 10⁻² A/cm² to 2.6 × 10⁻⁹ A/cm² measured at 1 MV/cm. This is attributed to a lack of pinhole formation. Power-law fitting of current density versus electric field (J-ξ)data is presented as an efficient tool to detect the presence of pinholes in a PIC insulator and can be readily distinguished from Poole-Frenkel conduction and Fowler-Nordheim tunneling common in MIM diodes with ultra-thin insulators. |
| Genre | Thesis/Dissertation |
| Access Condition | http://creativecommons.org/licenses/by-nc/3.0/us/ |
| Topic | solution |
| Identifier | http://hdl.handle.net/1957/51704 |
