Record Details
Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison |
| Names |
Smith, Sean W.
(creator) Wang, Wei (creator) Keszler, Douglas A. (creator) Conley, John F., Jr. (creator) |
| Date Issued | 2014-05-07 (iso8601) |
| Note | This is the publisher’s final pdf. The published article is copyrighted by the American Vacuum Society and can be found at: http://scitation.aip.org/content/avs/journal/jvsta. |
| Abstract | A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500°C anneal results in the formation of a ~6 nm thick interfacial SiO₂ layer at the Si interface. This SiO₂ interfacial layer significantly affects the electrical performance of PIC Al₂O₃ films deposited on Si. |
| Genre | Article |
| Identifier | Smith, S. W., Wang, W., Keszler, D. A., & Conley Jr, J. F. (2014). Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison. Journal of Vacuum Science & Technology A, 32(4), 041501. doi:10.1116/1.4874806 |
