Record Details
Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation |
| Names |
Biswas, Pranab
(creator) Halder, Nripendra N. (creator) Kundu, Souvik (creator) Banerji, P. (creator) Shripathi, T. (creator) Gupta, M. (creator) |
| Date Issued | 2014-05 (iso8601) |
| Note | This is the publisher’s final pdf. The published article is copyrighted by the author(s) and published by the American Institute of Physics Publishing. The published article can be found at: http://scitation.aip.org/content/aip/journal/adva;jsessionid=72iqa9pms2si7.x-aip-live-02. |
| Abstract | See article for Abstract. |
| Genre | Article |
| Access Condition | http://creativecommons.org/licenses/by/3.0/us/ |
| Identifier | Biswas, P., Halder, N. N., Kundu, S., Banerji, P., Shripathi, T., & Gupta, M. (2014). Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation. AIP Advances, 4(5), 057108. doi:10.1063/1.4876236 |
