Record Details
Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O |
| Names |
Austin, Dustin Z.
(creator) Allman, Derryl (creator) Price, David (creator) Hose, Sallie (creator) Saly, Mark (creator) Conley, John F., Jr. (creator) |
| Date Issued | 2013-12-09 (iso8601) |
| Note | This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing. It can be found at: http://scitation.aip.org/content/avs/journal/jvsta. |
| Abstract | Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films deposited at 150°C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm³, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210°C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties. |
| Genre | Article |
| Identifier | Austin, D. Z., Allman, D., Price, D., Hose, S., Saly, M., & Conley Jr, J. F. (2014). Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O. Journal of Vacuum Science & Technology A, 32(1), 01A113. doi:10.1116/1.4840835 |
