Record Details
The effect of etches on surface recombination in silicon
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | The effect of etches on surface recombination in silicon |
| Names |
Cheng, Dan Sang
(creator) Looney, James C. (advisor) |
| Date Issued | 1962-11-15 (iso8601) |
| Note | Graduation date: 1963 |
| Abstract | This thesis presents a limited investigation of the effects of various etches on the surface properties of silicon. Surface recombination velocities of silicon under different etching treatments are compared by using the photoelectromagnetic effect. A measure of the minority carriers lifetime by the photoconductive decay method provides another means of comparing various surface treatments and ambient atmospheres. CP-4 etch yields the smallest surface recombination velocity in silicon; while sodium dichromate solution has the pronounced effect of reducing the minority carrier lifetimes in silicon. Ambient atmospheres have no obvious influence on the surface recombination velocity of silicon. |
| Genre | Thesis/Dissertation |
| Topic | Silicon |
| Identifier | http://hdl.handle.net/1957/49071 |
