Record Details
Design of high-input impedance, wideband transistorized amplifiers
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Design of high-input impedance, wideband transistorized amplifiers |
| Names |
Huaccho Salazar, Reynaldo
(creator) Weber, Leonard J. (advisor) |
| Date Issued | 1963-07-11 (iso8601) |
| Note | Graduation date: 1964 |
| Abstract | Conventional bi-polar transistors are inherently low input impedance devices. Transistor amplifiers have been designed which will present high input impedance, but the frequency response is limited to low frequencies, hundreds of kilocycles. This thesis investigates both field effect transistors and positive feedback as applied to high input impedance wide band amplifier design. The field effect transistor, in the source-follower configuration, is shown to offer high input impedance, wide-band amplification, and low output impedance. Positive feedback is shown to increase considerably the input impedance without any danger of self-oscillations. The generalized theory is presented using a model amplifier consisting of an input stage containing the field effect transistor, followed by two transistor stages. All the necessary criteria are derived from this model. An experimental amplifier was built and tested in the laboratory to check the validity of the theoretical analysis. The input impedance of this amplifier rneasured 20.7 MΩ of resistance shunted by 1.7 pf. of capacitance; the band-width extended from about 30 cps to about 10 Mc. |
| Genre | Thesis/Dissertation |
| Topic | Amplifiers (Electronics) |
| Identifier | http://hdl.handle.net/1957/48456 |
