Record Details
Reactively sputtered films of silicon nitride for diffusion masking
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Reactively sputtered films of silicon nitride for diffusion masking |
| Names |
Delzer, Dennis Richard
(creator) Looney, James C. (advisor) |
| Date Issued | 1966-08-29 (iso8601) |
| Note | Graduation date: 1967 |
| Abstract | The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also investigated. Research was conducted on the sputtering properties of silicon nitride. Some of the secondary parameters which affect the sputtering rate were studied. These parameters included: cathode-to-substrate distance, applied voltage, gas pressure, and time. The uniformity of the sputtered films was also investigated. The results of these experiments were similar to the results of many published reports on sputtering. The last area of research covered by this thesis was the masking ability of the silicon nitride films. It was found that these reactively sputtered silicon nitride films effectively masked against the diffusion of boron and phosphorus in silicon. The minimum masking thickness was also studied. The masking ability of these nitride films against zinc diffusion in gallium arsenide was not conclusively proven. It appeared that the nitride films were masking against zinc diffusion, but the results were erratic. It was concluded that the diffusion technique was producing these poor results. More work on masking in GaAs was suggested using different diffusant sources. |
| Genre | Thesis/Dissertation |
| Topic | Silicon nitride |
| Identifier | http://hdl.handle.net/1957/48245 |
