Record Details
Deterioration of gallium arsenide diodes
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Deterioration of gallium arsenide diodes |
| Names |
Matsuo, Samuel Seiji
(creator) Looney, James C. (advisor) |
| Date Issued | 1965-08-11 (iso8601) |
| Note | Graduation date: 1966 |
| Abstract | Changes in the diode characteristics of three different types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters in which measurable changes were observed were the forward resistance, the reverse breakdown voltage, the forward "knee" of the diode curve and the constant of proportionality relating the reverse-bias capacitance to voltage. Of the three diodes tested, the bonded diodes, appeared to be the most stable. The forward resistance increased with time under load conditions for all types of diodes. In the zinc-diffused diodes large initial changes were observed, similar to those observed by Shibata. (19) The final rates of deterioration for all three diodes were about the same. This suggests that the mechanism of deterioration in this portion of the curves may be the same for all three types of diodes. For the final portions of the deterioration curves of the diffused diodes, the absolute value of load current is related to changes in resistance by Δ R = K √tI where K is a constant. Difficulty in determining the actual cross sectional area of the diodes prevented relating these changes to current density. In the worst case the proportionality constant relating voltage to reverse -bias capacitance varied from v⁻¹/².³ to v⁻/³.⁷ for diffused diodes. This indicates that the type of junction changed from a step to a PIN type. The voltage at the forward "knee" of the diode curve increased for the bonded diodes while it decreased for the point-contact and the diffused diodes. An increase in junction barrier height may be responsible for the variation in the bonded diodes while an increase in surface recombination states may be responsible for the decrease in the point-contact case. The spreading of the pn junction by diffusion of an electrically active element is a possible cause of the change in diffused diodes. |
| Genre | Thesis/Dissertation |
| Topic | Gallium |
| Identifier | http://hdl.handle.net/1957/48083 |
