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A thermoelectric study of doped liquid thallium-tellurium alloys

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Field Value
Title A thermoelectric study of doped liquid thallium-tellurium alloys
Names Field, Marshall B. (creator)
Cutler, Melvin (advisor)
Date Issued 1966-11-03 (iso8601)
Note Graduation date: 1967
Abstract Electrical resistivity and thermoelectric power measurements
have been made over the temperature range of 450° to 600°C on
n-type liquid thalliurn-tellurium solutions. Liquids with compositions
from 61.5 to 72.0 atomic percent thallium were studied. In addition,
alloys of some of the three component thallium-teIlurium solutions
containing small amounts of silver, cadmium, indium, tin (n-type
doping impurities), or antimony (p-type doping impurity) were studied.
The results suggest that each added atom of these doping elements
contributes some fractional number of a donor (or acceptor) level.
In addition, some measurements were made in a fused silica cell at
temperatures up to 875°C.
The data are analyzed using a conventional solid state transport
theory, This analysis yields the relative concentration and electron
mobility as a function of composition. P-n transitions in the Seebeck
coefficient at high temperature for some near intrinsic thallium-tellurium solutions show that the electron mobility is larger
than the hole mobility at high temperatures. Other results included
estimates of the activation energies for holes in n-type solutions at
two compositions, and the electrical determination of a liquidus in
part of the phase diagrarn of the thallium-telluriurn binary system.
Genre Thesis/Dissertation
Topic Thallium compounds
Identifier http://hdl.handle.net/1957/47651

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