Record Details
Vacuum deposition of silicon monoxide for capacitors
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Vacuum deposition of silicon monoxide for capacitors |
| Names |
Lo, Joseph Ping Kwan
(creator) Looney, James C. (advisor) |
| Date Issued | 1966-05-10 (iso8601) |
| Note | Graduation date: 1966 |
| Abstract | The experimental procedure for evaporating silicon monoxide together with the methods for measuring the film thickness have been investigated. The effects of various process parameters on the rate of deposition, such as source temperature and source-substrate distance, have been studied. The uniformity of silicon monoxide films deposited by this particular vacuum system and evaporation parameters have been examined. The uniformity of the resultant films follows closely Knudsen's law. Capacitors of 2,400 to 21,900 uuf/cm² with a silicon monoxide film thickness range of 2,457 to 21,567 A⁰ have been deposited on Pyrex glass using evaporated aluminum films for conducting plates. Measurements of capacitors such as capacitance, dissipation factor, breakdown voltage, dielectric constant and leakage resistance have been investigated. Capacitor breakdown voltage in this range lies between 25 - 115 volts d-c, depending upon the thickness of dielectric films. Dissipation factor, dielectric constant and leakage resistance of Si0 films are very sensitive to deposition rate and somewhat sensitive to thickness. Possible causes of shorts in the capacitors are discussed. |
| Genre | Thesis/Dissertation |
| Topic | Capacitors |
| Identifier | http://hdl.handle.net/1957/47805 |
