Record Details
Thin-film wideband tunnel-diode amplifier
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Thin-film wideband tunnel-diode amplifier |
| Names |
Hsieh, Edmund Jui-ching
(creator) Looney, James C. (advisor) |
| Date Issued | 1966-03-18 (iso8601) |
| Note | Graduation date: 1966 |
| Abstract | Wideband tunnel-diode amplifiers using common-base transistor stages for isolation were investigated for stability criteria, frequency response, and the effects of temperature and voltage supply fluctuations. For the first time the full frequency spectrum of a tunnel-diode, from d-c to the gigahertz (GHz) range, was able to be utilized in an amplifier. Three experimental circuits constructed by conventional as well as thin-film techniques were tested. They represented a workable model of a new design of a tunnel-diode amplifier capable of having constant gain over a frequency spectrum from d-c to one-half GHz. It was shown that this design principle could be applied to extend the upper frequency limit to a few GHz if higher frequency tunnel-diodes and better circuit construction techniques are employed. |
| Genre | Thesis/Dissertation |
| Topic | Tunnel diodes |
| Identifier | http://hdl.handle.net/1957/47512 |
