Record Details
Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation |
| Names |
Rajachidambaram, M. S.
(creator) Pandey, A. (creator) Vilayurganapathy, S. (creator) Nachimuthu, P. (creator) Thevuthasan, S. (creator) Herman, G. S. (creator) |
| Date Issued | 2013-10-22 (iso8601) |
| Note | This is the publisher’s final pdf. The published article is copyrighted by the American Institute of Physics Publishing and can be found at: http://scitation.aip.org/content/aip/journal/apl. |
| Abstract | The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on the exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies. |
| Genre | Article |
| Identifier | Rajachidambaram, M. S., Pandey, A., Vilayurganapathy, S., Nachimuthu, P., Thevuthasan, S., & Herman, G. S. (2013). Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. Applied Physics Letters, 103(17), 171602. doi:10.1063/1.4826457 |
