Record Details
Percussive-welded p-n junctions in silicon
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Percussive-welded p-n junctions in silicon |
| Names |
Tao, David Ming-Shih
(creator) Looney, James C. (advisor) |
| Date Issued | 1968-05-06 (iso8601) |
| Note | Graduation date: 1968 |
| Abstract | This thesis investigates a way to fabricate P-N junctions by percussive welding. The theoretical basis of percussive welding, design considerations of the apparatus used, and the electrical characteristics of the junctions were the main objectives of this investigation. P-type silicon wafers and gold wire doped with arsenic as a N-type impurity source were the materials studied. It was found that percussive welding alone gave ohmic contacts. An alloying treatment changed the junctions to rectifying type. The junction capacitance versus reverse bias voltage relations were studied. From these relations, impurity profiles of a simple alloyed junction and an alloyed percussive-welded junction were obtained. A comparison between the two impurity profiles was given. |
| Genre | Thesis/Dissertation |
| Topic | Welding -- Research |
| Identifier | http://hdl.handle.net/1957/47084 |
