Record Details
Linear metal-oxide-semiconductor integrated circuits
ScholarsArchive at Oregon State University
| Field | Value |
|---|---|
| Title | Linear metal-oxide-semiconductor integrated circuits |
| Names |
Chalfan, John Lawrence
(creator) Looney, James C. (advisor) |
| Date Issued | 1968-11-08 (iso8601) |
| Note | Graduation date: 1969 |
| Abstract | This paper is a study of various linear Metal-Oxide- Semiconductor integrated circuit configurations with the goal of improving their operation. The operation of MOS devices is covered including their use as load devices to replace diffused resistors. The advantages and disadvantages of the resulting circuits as well as possible physical layouts are discussed. The use of a current-source load device is suggested to improve the voltage gain and output voltage swing. Experimental results show that circuits with current-source loads have at least a ten times advantage in voltage gain and an output voltage swing nearly equal to the supply voltage. |
| Genre | Thesis/Dissertation |
| Topic | Electronic circuits |
| Identifier | http://hdl.handle.net/1957/46610 |
